View fqp18n50v2 fqpf18n50v2 datasheet:

QFETFQP18N50V2/FQPF18N50V2 500V N-Channel MOSFETFeatures Description 550V @TJ = 150C These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 VDMOS technology. Low gate charge (typical 42 nC)This advanced technology has been especially tailored to mini- Low Crss (typical 11 pF) mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and Fast switchingcommutation mode. These devices are well suited for high effi- 100% avalanche tested cient switched mode power supplies, active power factor correc-tion, electronic lamp ballast based on half bridge topology. Improved dv/dt capabilityD

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