View fqpf10n60ct fqpf10n60cydtu datasheet:

April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and 100% avalanche testedcommutation mode. These devices are well suited for high effi- Improved dv/dt capability ciency switched mode power supplies, active power factor cor-rection, electronic lamp ballasts based on half bridge topology.DGTO-220 TO-220FG D SG D SFQP Series FQPF SeriesSAbsolute Maximum Ratings

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