View fs8205a datasheet:

FS8205AN-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 6A 32m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagramSOT-23-6L Marking G1 D1/D2 G2 8205AS1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1FS8205AN-Channel Enhancement Mode MOSFETAbsolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V Continuous Drain Current ID 6 A Pulsed Drain Current IDM 25 A Power Dissipation PD 1.5 W Junction Temperature TJ -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit

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