View fta1015 datasheet:

SEMICONDUCTORFTA1015TECHNICAL DATAB CFEATURES TO-92 PNP TransistorDIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage -50 V G 0.85H 0.45_HJ 14.00 + 0.50VCEO Collector-Emitter Voltage -50 V L 2.30F FM 0.51 MAXVEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA 1 2 3 1. EMITTER2. COLLECTORPD Collector Power Dissipation 600 mW 3. BASETj Junction Temperature 125 Tstg Storage Temperature -55-125 TO-92 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-b

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