View ftd882d datasheet:

SEMICONDUCTORFTD882DTECHNICAL DATAFTD882D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage 40 V J 0 5 0 1L 0 50 0 101 2 3VCEO Collector-Emitter Voltage 30 V O 1 6 0 2Q 0 95 MAXVEBO Emitter-Base Voltage 6 V 1 BASEIC Collector Current -Continuous 3 A 2 COLLECTOR3 EMITTER10PC Collector Power Dissipation(Tc=25) WThermal Resistance, junction to Ambient RJA 100 /W Tj Junction Temperature 150 D-PAK (TO-252)Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base

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