View gstd882 datasheet:

GSTD882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments TO-252 Pin Description1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Quantity GSTD882F(R or O or Y or GR) TO-252 2500 PCS www.gs-power.com1GSTD882Absolute Maximum Ratings TA=25C Symbol Conditions Typical UnitVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC(DC) Collector Current (DC) 3.0 A IC(Pulse) Collector Current (Pulse) (1) 7.0 AIB(Pulse) Base Current 0.6 ATC=25C 10PD Total Device Dissipation W TA=25C 1.25 TJ Junction Temperature Range 150 C TSTG Storage Temperature

Keywords - ALL TRANSISTORS DATASHEET

 gstd882.pdf Design, MOSFET, Power

 gstd882.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gstd882.pdf Database, Innovation, IC, Electricity