View gt50j121 datasheet:

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter voltage VCES 600 VGate-emitter voltage VGES 20 VDC IC 50JEDEC Collector current A 1 ms ICP 100JEITA Collector power dissipation PC 240 W(Tc = 25C) TOSHIBA 2-21F2CJunction temperature Tj 150 CWeight: 9.75 g Storage temperature range Tstg -55 to 150 C Note: Using continuously under heavy loads (e.g.

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