View gt50j301 datasheet:

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 600 VGate-Emitter Voltage VGES 20 VDC IC 50Collector Current A 1ms ICP 100DC IF 50 JEDEC Forward Current A 1ms IFM 100JEITA Collector Power Dissipation TOSHIBA 2-21F2CPC 200 W(Tc = 25C) Weight: 9.75 g (typ.) Junction Temperature Tj 150 CStorage Temperature Tstg -55~150 CScrew Torque 0.8 N m Note: Using continuously under heavy loads (e.g. the application of high temperature/cur

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