View gt50j325 datasheet:

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mmFast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter voltage VCES 600 VGate-emitter voltage VGES 20 VDC IC 50Collector current A 1 ms ICP 100 JEDEC DC IF 50Emitter-collector forward JEITA A current 1 ms IFM 100TOSHIBA 2-21F2CCollector power dissipation PC 240 W(Tc = 25C) Weight: 9.75 g Junction tempe

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