View gt50j328 datasheet:

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mmFourth Generation IGBT Enhancement mode type High speed : tf = 0.1 s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter voltage VCES 600 VGate-emitter voltage VGES 25 VDC IC 50Continuous collector current A 1ms ICP 120DC IF 30Diode forward current A 1ms IFP 120Collector power dissipation PC 140 W (Tc = 25C) Junction temperature Tj 150 CJEDEC Storage temperature range Tstg -55 to 150 C JEITA Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-16C1Chigh temperature/current/voltage and the significant change in temperature, etc.) may cause thi

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