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GT50J341Discrete IGBTs Silicon N-Channel IGBTGT50J341GT50J341GT50J341GT50J3411. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Sixth generation(2) Enhancement mode(3) High-speed switching: tf = 0.15 s (typ.) (IC = 50 A)(4) Low saturation voltage: VCE(sat) = 1.6 V (typ.) (IC = 50 A)(5) FRD included between emitter and collector3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit3. Packaging and Internal Circuit1: Gate2: Collector3: EmitterTO-3P(N)2011-06-081Rev.2.0GT50J3414. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)4. Absolute Maximum Ra

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