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View gwm100-0085x1-smd datasheet:

gwm100-0085x1-smdgwm100-0085x1-smd

GWM100-0085X1VDSS = 85 VThree phase full BridgeID25 = 103 Awith Trench MOSFETsRDSon typ. = 5.5 mWin DCB isolated high current packageL+G3 G5G1S3 S5S1L1L2L3Straight leads Surface Mount DeviceG4 G6G2S4S6S2L-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TJ = 25C to 150C 85 V - electric power steering VGS 20 V - starter generator in industrial vehiclesID25 TC = 25C 103 A - propulsion drivesID90 TC = 90C 77 A - fork lift drivesID110 TC = 110C 68 A in battery supplied equipmentIF25 TC = 25C (diode) tbd AFeaturesIF90 TC = 90C (diode) tbd AIF110 TC = 110C (diode) tbd A MOSFETs in trench technology: - low RDSonSymbol Conditions Characteristic Values - optimized intrinsic reverse diode package:(TJ = 25C, unless otherwise specified)

 

Keywords - ALL TRANSISTORS DATASHEET

 gwm100-0085x1-smd.pdf Design, MOSFET, Power

 gwm100-0085x1-smd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 gwm100-0085x1-smd.pdf Database, Innovation, IC, Electricity

 

 
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