View h2n4401 datasheet:

Spec. No. : HE6215HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2002.02.22MICROELECTRONICS CORP.Page No. : 1/5H2N4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4401 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4403 High Power Dissipation: 625 mW at 25C High DC Current Gain: 100-300 at 150mA High Breakdown Voltage: 40 V Min.Absolute Maximum Ratings Maximum TemperaturesStorage Temperature........................................................................................................................... -55 ~ +150 CJunction Temperature................................................................................................................... +150 C Maximum Maximum Power DissipationTotal Power Dissipation (TA=25C)...........................

Keywords - ALL TRANSISTORS DATASHEET

 h2n4401.pdf Design, MOSFET, Power

 h2n4401.pdf RoHS Compliant, Service, Triacs, Semiconductor

 h2n4401.pdf Database, Innovation, IC, Electricity