View h5n2512fl-m0 datasheet:

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100250V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 250 VGate to source voltage VGSS 30 VDrain current ID 18 ADrain peak current ID (pulse)Note1 72 ABody-drain diode reverse drain current IDR 18 ABody-drain diode reverse drain peak current IDR (pulse)Note1 72 AAvalanche current IAP Note3 18 AAvalanche energy EARNote3 20.2 mJChannel dissipation Pch Note2 35 WChannel to case thermal imped

Keywords - ALL TRANSISTORS DATASHEET

 h5n2512fl-m0.pdf Design, MOSFET, Power

 h5n2512fl-m0.pdf RoHS Compliant, Service, Triacs, Semiconductor

 h5n2512fl-m0.pdf Database, Innovation, IC, Electricity