View h5n5004pl-e0-e datasheet:

Preliminary Datasheet H5N5004PL-E0-E R07DS1198EJ0100500V - 50A - MOS FET Rev.1.00High Speed Power Switching Mar 26, 2014Features Low on-resistance R DS (on) = 0.09 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ Outline RENESAS Package code: PRSS0003ZC-A(Package name:TO-264)D1. GateG2. Drain3. Source1 S23Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 50 ADrain peak current ID(pulse) Note1 200 ABody-drain diode reverse drain current IDR 50 ABody-drain diode reverse drain peak current IDR(pulse) Note1 200 AAvalanche current IAP Note3 25 AChannel dissipation Pch Note2 250 WCh

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 h5n5004pl-e0-e.pdf Design, MOSFET, Power

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