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haf1003l_haf1003shaf1003l_haf1003s

HAF1003(L), HAF1003(S)Silicon P Channel MOS FET Series Power SwitchingADE-208-626B (Z)3rd. EditionJuly 2000This FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temperature like applying over power consumption, over currentetc.Features Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Builtin the over temperature shutdown circuit Latch type shutdown operation (Need 0 voltage recovery)OutlineLDPAKD4 4G 1Gate resistor2312Tempe Latch Gate3rature ShutCircuitSencing down1. GateCircuit Circuit2. Drain3. Source4. DrainSHAF1003(L), HAF1003

 

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