View hfh18n50s datasheet:

Nov 2009BVDSS = 500 VRDS(on) typ = 0.220 HFH18N50SID = 19 A500V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.220 (Typ.) @VGS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 500 VID Drain Current Continuous (TC = 25 ) 19 ADrain Current Continuous (TC = 100 ) 11.4 AIDM Drain Current Pulsed (Note 1) 76 AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 945 mJIAR Avalanche Current (Note 1) 19 AEAR Repetitive Avalanche Energy (Note 1) 23 mJdv/dt Peak Diod

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