View hfs10n60s datasheet:

Nov 2007BVDSS = 600 VRDS(on) typ = 0.67 HFS10N60SID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Unrivalled Gate Charge : 29 nC (Typ ) Extended Safe Operating Area Lower RDS(ON) : 0.67 (Typ.) @VGS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsV Drain Source Voltage 600 VVDSS Drain-Source Voltage 600 VID Drain Current Continuous (TC = 25 9.5* ADrain Current Continuous (TC = 100 5.7* AIDM Drain Current Pulsed (Note 1) 38* AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 700 mJI Avalanche Current (Note 1

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