View hfs10n60u datasheet:

Oct 2013BVDSS = 600 VRDS(on) typ = 0.67 HFS10N60UID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 GS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 600 VDrain Current Continuous (TC = 25 ) 9.5* AIDDrain Current Continuous (TC = 100 ) 6.0* AIDM Drain Current Pulsed (Note 1) 38* AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 470 mJIAR Avalanche Current (Note 1) 9.5 AEAR Repetitive Avalanche Energy (Note 1) 5.0 mJ

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