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HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oCmuch lower on-state voltage drop varies only moderately Low Conduction Lossbetween 25oC and 150oC.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode p

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