View hgtd1n120bns hgtp1n120bn datasheet:

HGTD1N120BNS, HGTP1N120BNData Sheet January 20015.3A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150oCcombine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a Short Circuit RatingMOSFET and the low on-state conduction loss of a bipolar Low Conduction Losstransistor. Avalanche RatedThe IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Temperature Compensating SABER Modelconduction losses are essential, such as: AC and DC motor Thermal Impedance SPICE Mo

Keywords - ALL TRANSISTORS DATASHEET

 hgtd1n120bns hgtp1n120bn.pdf Design, MOSFET, Power

 hgtd1n120bns hgtp1n120bn.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgtd1n120bns hgtp1n120bn.pdf Database, Innovation, IC, Electricity