All Transistors. Datasheet

 

View hgtg11n120cn hgtp11n120cn hgt1s11n120cn datasheet:

hgtg11n120cn_hgtp11n120cn_hgt1s11n120cnhgtg11n120cn_hgtp11n120cn_hgt1s11n120cn

HGTG11N120CN, HGTP11N120CN,HGT1S11N120CNSData Sheet December 200143A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oCHGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oCvoltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device Short Circuit Ratinghas the high input impedance of a MOSFET and the low on- Low Conduction Lossstate conduction loss of a bipolar transistor. Avalanche RatedThe IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Thermal Impedance SPICE Modelconduction losses are essential, such as: AC and DC motor Te

 

Keywords - ALL TRANSISTORS DATASHEET

 hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Design, MOSFET, Power

 hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.