View hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4 datasheet:

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oCloss of a bipolar transistor. The much lower on-state voltage Low Conduction Lossdrop varies only moderately between 25oC and 150oC. Related LiteratureThis IGBT is ideal for many high voltage switching - TB334 Guidelines for Soldering Surface Mount applications operating at high frequencies where low Components to PC Boards

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