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HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching 600V Switching SOA Capabilitydevices combining the best features of MOSFETs and bipolar transistors. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oCimpedance of a MOSFET and the low on-state conduction Low Conduction Lossloss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The Temperature Compensating SABER Model IGBT used is the development type T

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