View hgtg12n60c3d datasheet:

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. The device has the high input impedance of a MOS-FET and the low on-state conduction loss of a bipolar transistor.The much lower on-state voltage drop varies only moderatelybetween +25oC and +150oC. The IGBT used is the develop-Terminal Diagramment type TA49123. The diode used in antiparallel with theIGBT is the development type TA49061. N-CHANNEL ENHANCEMENT MODEThe IGBT is ideal for many high voltage s

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