View hgtg20n120 datasheet:

S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best features of MOSFETs andbipolar transistors. The device has the high input impedanceof a MOSFET and the low on-state conduction loss of abipolar transistor. The much lower on-state voltage dropTerminal Diagramvaries only moderately between +25oC and +150oC.IGBTs are ideal for many high voltage switching applications Coperating at frequencies where low conduction losses areessential, such as: AC and DC motor controls, powersupplies and drivers for solenoids, relays and contactors

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