View hgtg20n60a4 hgtp20n60a4 datasheet:

HGTG20N60A4, HGTP20N60A4Data Sheet December 2001600V, SMPS Series N-Channel IGBTs FeaturesThe HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20Ahigh voltage switching devices combining the best features 200kHz Operation at 390V, 12Aof MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capabilityhigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oCon-state voltage drop varies only moderately between 25oC Low Conduction Lossand 150oC. Temperature Compensating SABER Model This IGBT is ideal for many high voltage switching www.intersil.comapplications operating at high frequencies where low conduction losses are essential. This device has been Related L

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