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HGTG40N60A4Data Sheet August 2003 File Number600V, SMPS Series N-Channel IGBT FeaturesThe HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40Adevice combining the best features of a MOSFET and a 200kHz Operation At 390V, 20Abipolar transistor. This device has the high input impedance 600V Switching SOA Capabilityof a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at TJ = 125ovaries only moderately between 25oC and 150oC. This IGBT Low Conduction Lossis ideal for many high voltage switching applications operating at high frequencies where low conduction losses Packagingare essential. This device has been optimized for high JEDEC STYLE TO-247frequency switch mode power supplies.EForm

 

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