View hgtg40n60b3 datasheet:

HGTG40N60B3Data Sheet November 2004 File Number70A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oCMOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only Short Circuit Ratingmoderately between 25oC and 150oC. Low Conduction LossThe IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Packagingconduction losses are essential, such as: AC and DC motor JEDEC STYLE TO-247controls, power supplies and drivers for solenoids, relays and contactors.

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