View hgtg40n60b3 datasheet:

S E M I C O N D U C T O R HGTG40N60B3PRELIMINARY70A, 600V, UFS Series N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 70A, 600V at TC = +25oCE Square Switching SOA CapabilityCG Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction LossDescriptionThe HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. The device has the high input impedance of aTerminal DiagramMOSFET and the low on-state conduction loss of a bipolartransistor. The much lower on-state voltage drop varies onlyN-CHANNEL ENHANCEMENT MODEmoderately between +25oC and +150oC.The IGBT is ideal for many high voltage switching Capplications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motorcontrols, power supplies and dri

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