View hgtg5n120bnd hgtp5n120bnd datasheet:

HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and Short Circuit Ratingbipolar transistors. This device has the high input impedance Low Conduction Lossof a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type Thermal Impedance SPICE ModelTA49308. The Diode used is the development type TA49058 Temperature Compensating SABER Model www.fairchildsemi.com(Part number RHRD6120). Rel

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