View hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds datasheet:

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oCdesigns. They are new members of the MOS gated highvoltage switching IGBT family. IGBTs combine the best Short Circuit Ratingfeatures of MOSFETs and bipolar transistors. This device Low Conduction Losshas the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used Thermal Impedance SPICE Modelis the development type TA49308. The Diode used is the Temperature Compensating SABER Modelwww.intersil.comdevelopment ty

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