View hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds datasheet:

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar transistor. The much lower on-state voltage dropvaries only moderately between 25C and 150C. The IGBT used isthe development type TA49331. The diode used in anti-parallel is thedevelopment type TA49370.This IGBT is ideal for many high voltage switching applicationsoperating at high frequencies where low conduction losses areTO-247-3LD TO-220-3LDessential. This device has been optimized for high frequency switchCASE 340CK CASE 340ATmode power supplies.Formerly Developmenta

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