View hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1 datasheet:

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance No Anti-Parallel DiodeApplicationsHGTP-TYPES JEDEC TO-220AB Power SuppliesEMITTER Motor Drives COLLECTORCOLLECTORGATE(FLANGE) Protection CircuitsDescriptionThe HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1are n-channel enhancement-mode insulated gate bipolar transistors(IGBTs) designed for high-voltage, low on-dissipation applications such asTerminal Diagramswitching regulators and motor drivers.

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 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf Design, MOSFET, Power

 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf Database, Innovation, IC, Electricity