View hgtp10n4 datasheet:

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance No Anti-Parallel DiodeApplicationsHGTP-TYPES JEDEC TO-220AB Power SuppliesEMITTER Motor Drives COLLECTORCOLLECTORGATE(FLANGE) Protection CircuitsDescriptionThe HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1are n-channel enhancement-mode insulated gate bipolar transistors(IGBTs) designed for high-voltage, low on-dissipation applications such asTerminal Diagramswitching regulators and motor drivers.

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