View hm10n60 hm10n60f datasheet:

10N60 / 10N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.0A, 600V, RDS(on) = 0.750 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 48nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchingperformance, and withstand high energy pulse in the 100% avalanche testedavalanche and commutation mode. These devices are well Improved dv/dt capabilitysuited for high efficiency switched mode power supplies,active power factor correction based on half bridgetopology.D G TO-220 TO-220FG DSG D S SAbsolute Maximum Ratings TC = 25Cunless otherwise notedSymbol Parameter HM10N60 HM10N60F Unit

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