View hm20n60f datasheet:

Silicon N-Channel Power MOSFET HM20N60F VDSS 600 V General Description ID 20 A HM20N60F, the silicon N-channel Enhanced PD(TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220 , which accords with the RoHS standard.. Features G D STO-220F Fast Switching Low ON Resistance(Rdson0.45) Low Gate Charge (Typical Data:61nC) Low Reverse transfer capacitances(Typical: 20pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Un

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