View hss2319 datasheet:

HSS2319 P-Ch 40V Fast Switching MOSFETs Product Summary Description VDS -40 V The HSS2319 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),max 70 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The HSS2919 meet the RoHS and Green Product requirement with full function reliability approved. SOT 23 Pin Configuration Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Rating Symbol Parameter Units 10s Steady State VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current, VGS @ -4.5V1 -3.7 -3.2 A ID@TA=70 Continuous Drain Current, VGS @ -4.5V1 -3.0 -2.6 A IDM Pulsed Drain Current2 -16.1 A PD@TA=

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