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View hy3503c2 datasheet:

hy3503c2hy3503c2

HY3503C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/150AD D D D D D D DRDS(ON)= 2.0m(typ.) @VGS = 10VRDS(ON)= 2.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET Battery ProtectionOrdering and Marking Information Package Code C2: PPAK5*6-8L C2HY3503 Date Code Assembly Material YYXXXJWW G YYXXX WW G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defin

 

Keywords - ALL TRANSISTORS DATASHEET

 hy3503c2.pdf Design, MOSFET, Power

 hy3503c2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hy3503c2.pdf Database, Innovation, IC, Electricity

 

 
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