All Transistors. Datasheet

 

View hy3506p hy3506b datasheet:

hy3506p_hy3506bhy3506p_hy3506b

HY3506P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190ARDS(ON)= 3.5 m(typ.) @ VGS=10V 100% avalanche testedSDG Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage CodeP BP : TO-220FB-3L B: TO-263-2LHY3506 HY3506Assembly Material Date CodeG : Lead Free DeviceYYXXX WWYYXXXJWW G YYXXXJWW GNote: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defin

 

Keywords - ALL TRANSISTORS DATASHEET

 hy3506p hy3506b.pdf Design, MOSFET, Power

 hy3506p hy3506b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hy3506p hy3506b.pdf Database, Innovation, IC, Electricity

 

 
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