View hyg009n04ls1c2 datasheet:

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/200A D D D D D D D D RDS(ON)= 0.75m (typ.) @VGS = 10V RDS(ON)= 1.05m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Management for DC/DC Battery Protection Single N-Channel MOSFET Ordering and Marking Information Package Code C2 C2: PDFN5*6-8L G009N04 Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperatu

Keywords - ALL TRANSISTORS DATASHEET

 hyg009n04ls1c2.pdf Design, MOSFET, Power

 hyg009n04ls1c2.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hyg009n04ls1c2.pdf Database, Innovation, IC, Electricity