All Transistors. Datasheet

 

View ikp10n60trev2 3g datasheet:

ikp10n60trev2_3gikp10n60trev2_3g

IKP10N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution PG-TO-220-3-1 - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-

 

Keywords - ALL TRANSISTORS DATASHEET

 ikp10n60trev2 3g.pdf Design, MOSFET, Power

 ikp10n60trev2 3g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ikp10n60trev2 3g.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.