All Transistors. Datasheet

 

View ipb108n15n3g ipp111n15n3g ipi111n15n3g datasheet:

ipb108n15n3g_ipp111n15n3g_ipi111n15n3gipb108n15n3g_ipp111n15n3g_ipi111n15n3g

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM)DS(on)ID 83 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificationHalogen-free according to IEC61249-2-21Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package PG-TO263 PG-TO220-3 PG-TO262-3 Marking 108N15N 111N15N 111N15N Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 83 AD CT =100 C59CI T =25 C332Pulsed drain current2) D,pulse CEAvalanche

 

Keywords - ALL TRANSISTORS DATASHEET

 ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf Design, MOSFET, Power

 ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf Database, Innovation, IC, Electricity

 

 
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