View ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3 datasheet:

IPB200N15N3 G IPD200N15N3 GIPI200N15N3 G IPP200N15N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 20 mW Excellent gate charge x R product (FOM)DS(on)ID 50 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 200N15N 200N15N 200N15N 200N15N Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 50 AD CT =100 C40CI T =25 C200Pulsed drain curre

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 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf Design, MOSFET, Power

 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf RoHS Compliant, Service, Triacs, Semiconductor

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