View ipd200n15n3 datasheet:

isc N-Channel MOSFET Transistor IPD200N15N3,IIPD200N15N3FEATURESStatic drain-source on-resistance:RDS(on)20mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 50 ADI Drain Current-Single Pulsed 200 ADMP Total Dissipation @T =25 150 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1Channel-to-ambient thermal resistance/WRth(j-a) 751isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Ch

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