View ipd50n04s4-08 ds 1 0 datasheet:

IPD50N04S4-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N0408Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25C, V =10V50 AContinuous drain current1) D C GST =100C, V =10V2) 47C GSI T =25C200Pulsed drain current2) D,pulse CI =25A55 mJAvalanche energy, single pulse2) E AS DIAvalanche current, single pulse - 50 AASV -Gate source voltage 20 VGSP T =25CPower dissipation 46 Wtot CT , T -Operating and storage temperature -55 ... +175 Cj stgIEC climatic category

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 ipd50n04s4-08 ds 1 0.pdf Design, MOSFET, Power

 ipd50n04s4-08 ds 1 0.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd50n04s4-08 ds 1 0.pdf Database, Innovation, IC, Electricity