View ipd70n04s3-07 ds 1 0 datasheet:

IPD70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 6.0mDS(on),maxI 82 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N04S3-07 PG-TO252-3-11 QN0407Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 C, V =10 VContinuous drain current 82 AD C GST =100 C, C58V =10 V1)GSI T =25 C280Pulsed drain current1) D,pulse CE I =50 AAvalanche energy, single pulse 145 mJAS DVGate source voltage 20 VGSP T =25 CPower dissipation 79 Wtot CT , TOperating and storage temperature -55 ... +175 Cj stgIEC climatic category; DIN IEC 68-1 55/175/56Rev.

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 ipd70n04s3-07 ds 1 0.pdf Design, MOSFET, Power

 ipd70n04s3-07 ds 1 0.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd70n04s3-07 ds 1 0.pdf Database, Innovation, IC, Electricity