View ipp111n15n3 datasheet:

isc N-Channel MOSFET Transistor IPP111N15N3IIPP111N15N3FEATURESStatic drain-source on-resistance:RDS(on) 11.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 83 ADI Drain Current-Single Pulsed 332 ADMP Total Dissipation @T =25 214 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.7Channel-to-ambient thermal resistance/WRth(ch-a) 621isc w

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