View irf1010es datasheet:

PD - 91720IRF1010ESIRF1010EL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL)D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche RatedRDS(on) = 12mGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 84A Rectifier utilize advanced processing techniques toSachieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFETsare well known for, provides the designer with anextremely efficient and reliable device for use in a widevariety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides thehighest power capability and the lowest possible on-resistance in any existing surface mount

Keywords - ALL TRANSISTORS DATASHEET

 irf1010es.pdf Design, MOSFET, Power

 irf1010es.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1010es.pdf Database, Innovation, IC, Electricity