View irf1010ezlpbf irf1010ezpbf irf1010ezspbf datasheet:

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating.These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofTO-220AB D2Pak TO-262applications.IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbFAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 84 AContinuous Drain Curre

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